RB160A90 diodes rev.d 1/3 schottky barrier diode RB160A90 z applications z dimensions (unit : mm) general rectification z features 1) cylindrical mold type. (msr) 2) high i surge capability. 3) low i r . 4) high esd. z construction silicon epitaxial planar z taping specifications (unit : mm) z absolute maximum ratings (ta=25 c) z electrical characteristics (ta=25 c) symbol min. typ. max. unit v f 0.54 0.64 0.73 v i f =1.0a reverse current i r -5.00100 a v r =90v esd break down voltage esd 5-- kv c=100pf,r=1.5k ? forward and reverse : 1 time forward voltage conditions parameter a h2 e b c l2 l1 f d h1 brown blue t-31 52.41.5 t-31 5.00.5 t-31 5.00.3 t-31 t-32 t-31 t-32 t-31 1/2a1.2 t-32 1/2a0.4 t-31 0.7 t-32 0.2 max. t-31 t-32 t-31 t-32 t-31 1.5 max. t-32 0.4 max. h1(6mm)brown h2 5.00.5 |l1-l2| e h1 6.00.5 d0 b c1.0 max. symbol standard dimension value(mm) t-32 26.0 +0.4 0 rohm : msr manufacture date 291 291 3.00.2 0.60.1 2.50.2 cathodeband 8 symbol unit v rm v v r v io a forward current surge peak t=100 s i fsm a tj tstg parameter limits junction temperature (*1) mounted on epoxy board. 180half sine wave average rectified forward current (*1) 1 50 150 reverse voltage (repetitive peak) 90 reverse voltage (dc) 90 storage temperature -55 to +150
RB160A90 diodes rev.d 2/3 z electrical characteristic curves (ta=25 c) forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reserve recovery time:trr(ns) f=1mhz ta=25 vr=100v n=30pcs ave:478.3na :36.1612na 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 ta=-25 ta=25 ta=75 ta=125 ta=150 0.01 0.1 1 10 100 1000 10000 0 102030405060708090 ta=150 ta=125 ta=75 ta=25 ta=-25 100 110 120 130 140 150 160 170 180 190 200 ave:149.6pf ta=25 f=1mhz vr=0v n=10pcs 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=90v n=30pcs ave:4.655ua 600 610 620 630 640 650 ave:632.1mv ta=25 if=1a n=30pcs 0 50 100 150 200 ave:56.0a 0 5 10 15 20 25 30 ave:7.40ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 0 50 100 1 10 100 0 50 100 150 0.1 1 10 100 t ifsm 0 0.5 1 1.5 2 00.511.52 dc sin(?180) d=1/2 8.3ms ifsm 1cyc 8.3ms ifsm 1cyc 8.3ms 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) rth(j-l) time(ms) if=0.5a td=300us im=1ma mounted on epoxy board
RB160A90 diodes rev.d 3/3 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 dc d=1/2 sin(?180) 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 sin(?180) d=1/2 dc 0 0.2 0.4 0.6 0.8 1 0 102030405060708090 sin(?180) d=1/2 dc t tj=150 d=t/t t vr io vr=45v 0a 0v t tj=150 d=t/t t vr io vr=45v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:1.70kv ave:10.7kv electrostatic discharge test esd(kv) esd dispersion map
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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